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Wavelength 808nm CW High Power Diode Laser Bars 50W 100W

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Minimum order quantity: 100 Units
  • Type
  • Place of origin
  • Model number (Specification)
  • Center Wavelength
  • Output Power (Specification)
  • Operation mode
  • Emitter Width
  • Emitter Pitch
  • Bar Width
  • Cavity Length
  • Bar Thickness
  • Threshold Current
  • Operating current
  • Selling Units
  • Single package size
  • Single gross weight
  • Specification
  • Certifications & Compliance

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Key attributes

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Type
laser diode chip
Place of origin
China, Jilin
Model number (Specification)
808nm
Center Wavelength
808nm
Output Power (Specification)
50W 100W 200W
Operation mode
CW/QCW
Product description
Perfmance ParametersSymbolTypeUnit
Central Wavelengthλc808808808808nm
Optical Output powerPopt35710W
Operation modeCWCWCWCW
Emitter WidthW100150200200μm
Emitter PitchP500500500500μm
Cavity LengthL1.5234mm
Bar ThicknessD140140140140μm
Fast Axis Divergency (FWHM)θ⊥30303030deg
Slow Axis Divergency (FWHM)θ∥<8<8<10<10deg
Spectral Bandwidth (FWHM)Δλ<3<3<3<3[nm]
Slope Efficiency1.31.281.21.2[W/A]
Conversion efficiencyη60605555[%]
Threshold CurrentIth0.40.511.5[A]
Operating CurrentIopt2.84.8710[A]
Operating VoltageVop1.81.9<2<2[V]
Temperature Characteristics(dλ/dT)0.280.280.280.28nm/ºC
PolarizationTE/TMTE/TMTE/TMTE/TM
Operating TemperatureRange10~3510~3510~3510~35ºC
Storage Temperature Range40~7040~7040~7040~70ºC
Perfmance ParametersSymbolTypeUnit
Central Wavelengthλc808808nm
Optical Output powerPopt50100W
Operation modeCW/QCWCW/QCW
Emitter WidthW130100μm
Emitter PitchP500200μm
Number of EmittersL1948mm
Bar WidthB1000010000μm
Cavity LengthL10001500μm
Bar ThicknessD135135μm
Slope Efficiency1.31.2[W/A]
Conversion efficiencyη6055[%]
Threshold CurrentIth718.5[A]
Operating CurrentIopt49105[A]
Operating VoltageVop1.821.8V
Operating TemperatureRange2525ºC
Certifications & compliance
CE
Complies with EU standards
Description images
Product detail
Product detail
Product detail
Product detail
CE
Packaging and fulfilment
  • Step 1

    Payment and order readiness

    Minimum order: 100 Units

    Payment terms, specifications, and order details are confirmed before preparation begins.

  • Step 2

    Preparation

    31 days

  • Step 3

    Packaging and dispatch

    Packaging details are available on request.

    Final packing, freight, and delivery dates are confirmed before dispatch.

Technical specifications
Other details 18 fields
Type
laser diode chip
Place of origin
China, Jilin
Model number (Specification)
808nm
Center Wavelength
808nm
Output Power (Specification)
50W 100W 200W
Operation mode
CW/QCW
Emitter Width
130 μm
Emitter Pitch
500 μm
Bar Width
10000 μm
Cavity Length
1000 μm
Bar Thickness
135μm
Threshold Current
7 A
Operating current
49A
Selling Units
Single item
Single package size
25X10X25 cm
Single gross weight
1.0 kg
Specification
50W, 100W, 200W
Certifications & Compliance
CE
Lead time
31 days
Minimum order
100 Units

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